The ion implantation facility modifies the surface properties of materials by bombardment with energetic ions of any species. Modifications include doping and patterning of semiconductors, surface alloys that protect against wear and corrosion, formation of metastable materials, and changes on the optical constants.

The heart of this facility is a 200 kV ion implanter modified to produce intense beams of virtually any element in the periodic table. The standard target vacuum chamber is cryogenically pumped and equipped with a rotating water-cooled feedthrough to implant cylindrical geometry specimens up to 25 cm in diameter, a cryogenic feedthrough to cool samples down to 77K, and a hot stage to warm samples up to 700°C. Three other mobile target chambers can be attached to the rear of the standard target chamber. The first chamber is an Auger analyzer equipped, ultrahigh-vacuum chamber for implantation in an ultraclean environment and for in situ sputter-Auger analysis of implanted surfaces. The second chamber is equipped with an electron beam evaporator that allows for simultaneous ion bombardment and deposition of thin films (ion beam assisted deposition) under computer control. The third chamber is equipped to allow relatively high gas pressures to perform ion beam induced chemical vapor deposition of thin film on substrates near room temperature.

INSTRUMENTATION: Varian/Exrion Model 200A2F ion implanter with 10^-7 Torr vacuum in standard chamber; UHV chamber with 10^-9 Torr vacuum equipped with cylindrical mirror Auger electron analyzer and coaxial 5 keV electron gun, a 5 keV sputter ion gun with rastering, and a 1 keV Kaufman ion gun for ion beam sputter deposition; a high-vacuum target chamber with a 3 kW electron beam evaporator and quartz crystal evaporation rate controller; a high vacuum chamber with oven for heating liquids and a cryogenically cooled sample holder.